- gate-oxide thickness
- товщина оксидного шару затвора
English-Ukrainian dictionary of microelectronics. 2013.
English-Ukrainian dictionary of microelectronics. 2013.
Gate dielectric — A gate dielectric is a dielectric used between the gate and substrate of a field effect transistor. In state of the art processes, the gate dielectric is subject to many constraints, including:* Electrically clean interface to the substrate (low… … Wikipedia
65 nanometer — The 65 nanometer (65 nm) process is an advanced lithographic node used in volume CMOS semiconductor fabrication. Printed linewidths (i.e., transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between… … Wikipedia
Orders of magnitude (length) — Contents 1 Detailed list 1.1 Subatomic 1.2 Atomic to cellular 1.3 Human scale 1.4 … Wikipedia
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Threshold voltage — The threshold voltage of a MOSFET is usually defined as the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. The creation of this layer is described next … Wikipedia
High-k dielectric — The term high κ dielectric refers to a material with a high dielectric constant (κ) (as compared to silicon dioxide) used in semiconductor manufacturing processes which replaces the silicon dioxide gate dielectric. The implementation of high κ… … Wikipedia
CMOS — For other uses, see CMOS (disambiguation). CMOS inverter (NOT logic gate) Complementary metal–oxide–semiconductor (CMOS) ( … Wikipedia
Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed … Wikipedia
Ceramic matrix composite — Fracture surface of a fiber reinforced ceramic composed of SiC fibers and SiC matrix. The fiber pull out mechanism shown is the key to CMC properties … Wikipedia
Organic field-effect transistor — OFET based flexible display An organic field effect transistor (OFET) is a field effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum evaporation of small molecules, by solution casting of… … Wikipedia
Thermische Oxidation von Silizium — Die thermische Oxidation von Silizium ist in der Halbleitertechnik ein Beschichtungsverfahren, bei dem auf einem einkristallinen Siliziumsubstrat (beispielsweise einem Silizium Wafer) eine dünne Schicht aus amorphen Siliziumdioxid aufgebracht… … Deutsch Wikipedia